High performance ionic-liquid-gated air doped diamond field-effect transistors
| Autor: | Bo Hsu, Sidra Farid, Michael A. Stroscio, Mitra Dutta, Anirudha V. Sumant, Joseph Averion-Puttrich |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Fabrication Bioengineering 02 engineering and technology Substrate (electronics) engineering.material 010402 general chemistry 01 natural sciences Hall effect General Materials Science Electrical and Electronic Engineering Sheet resistance business.industry Mechanical Engineering Doping Diamond Biasing General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences Mechanics of Materials engineering Optoelectronics Field-effect transistor 0210 nano-technology business |
| Zdroj: | Nanotechnology. 32:135205 |
| ISSN: | 1361-6528 0957-4484 |
| Popis: | We report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ∼200 cm2 V−1 s−1. In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ∼1.3 kΩ/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from −3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 °C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 °C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput. |
| Databáze: | OpenAIRE |
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