Strong localization in suspended monolayer graphene by intervalley scattering
Autor: | Yaser Vaheb, Ismet I. Kaya, Cenk Yanik, Vahid Sazgari, Abdulkadir Canatar |
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Rok vydání: | 2021 |
Předmět: |
Physics
Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Graphene Scattering Annealing (metallurgy) FOS: Physical sciences Conductance 02 engineering and technology Quantum Hall effect 021001 nanoscience & nanotechnology 01 natural sciences law.invention Magnetic field Conductor law Impurity Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences 010306 general physics 0210 nano-technology |
Zdroj: | Physical Review B. 103 |
ISSN: | 2469-9969 2469-9950 |
Popis: | A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temperature and electric field dependent behavior on the conductance of the graphene device. The conductance around the neutrality point is observed to be reduced from around $e^2/h$ at 30 K to $\sim0.01~e^2/h$ at 20 mK. A direct transition from insulator to quantum Hall conductor within $\approx0.4~T$ accompanied by broken-symmetry-induced $\nu=0,\pm1$ plateaux confirms the presence of intervalley scatterers. Comment: 4 pages, 4 figures |
Databáze: | OpenAIRE |
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