Photonic switching in InAs/InP quantum dots
| Autor: | J.J.G.M. van der Tol, EA Evgeni Patent, S. Dilna, JH Joachim Wolter, Jos E. M. Haverkort, EW Erik Bogaart, R Richard Nötzel, G Zhao, Qian Gong, R. Prasanth, P.J. van Veldhoven |
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| Přispěvatelé: | Photonics and Semiconductor Nanophysics, Photonic Integration |
| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: |
Photoluminescence
Materials science business.industry Band gap Condensed Matter::Other Nonlinear optics Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Waveguide (optics) Optical switch Gallium arsenide chemistry.chemical_compound Condensed Matter::Materials Science Optics chemistry Quantum dot Optoelectronics Photonics business |
| Zdroj: | Proceedings of the 4th IEEE Conference on Nanotechnology, 16-19 August 2004, Munich, Germany, 86-88 STARTPAGE=86;ENDPAGE=88;TITLE=Proceedings of the 4th IEEE Conference on Nanotechnology, 16-19 August 2004, Munich, Germany |
| Popis: | We report all-optical switching due to state-filling in quantum dots (QDs). The switching energy is as low as 6 fJ since state-filling requires only 2 electron-hole pairs per QD. The single layer of InAs/InP QDs is inserted within a InGaAsP/InP waveguide which are processed into a Mach-Zehnder interferometric switch (MZI). A 1530-1570 nm probe beam is switched by optical excitation of one MZI-arm from above. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is entirely due to state-filling in the QDs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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