Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance–voltage measurements: Capabilities and limits
| Autor: | S. Ibrahim, P.-J. Ribeyron, J. Damon-Lacoste, Y. Veschetti, P. Roca i Cabarrocas, Jean-Paul Kleider, Alexander S. Gudovskikh |
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| Přispěvatelé: | Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2007 |
| Předmět: |
010302 applied physics
Chemistry business.industry Fermi level Metals and Alloys Heterojunction 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Capacitance voltage Intercept method symbols.namesake Optics 0103 physical sciences Materials Chemistry symbols 0210 nano-technology business Conduction band ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Thin Solid Films Thin Solid Films, Elsevier, 2007, 515, pp.7481-7485 E-MRS 2006 Spring Meeting E-MRS 2006 Spring Meeting, 2006, France Thin Solid Films, 2007, 515, pp.7481-7485 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2006.11.198 |
| Popis: | The capabilities and limitations of the well-known C–V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si and a non-negligible defect density at the a-Si:H/c-Si interface on the reliability of the C–V intercept method are discussed. The influence of the Fermi level positions in (p)c-Si and (n)a-Si:H on the inversion layer formation and the influence of the interface defect density have been analysed using numerical simulations and experimental measurements. |
| Databáze: | OpenAIRE |
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