Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide
| Autor: | Florian Werner, Fred Roozeboom, Jan Schmidt, Paul Poodt, Rolf Brendel, Boris Veith, Veronica Tiba |
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| Přispěvatelé: | Physics of Nanostructures, Plasma & Materials Processing |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Semiconducting silicon compounds
Reaction rates Physics and Astronomy (miscellaneous) Passivation Analytical chemistry Reaction zones chemistry.chemical_element Nanotechnology Precursor dosing Chemical vapor deposition Surface recombination velocities Thermodynamic stability Silicon wafers Atomic layer deposition Aluminium Wafer Thermal stability Crystalline silicon Thin film TS - Technical Sciences Industrial Innovation Crystalline silicon wafers Physics Oxides Mechatronics Mechanics & Materials P-type chemistry TFT - Thin Film Technology Aluminum oxides High rate Negative fixed charge Aluminum coatings Ultra-fast Aluminum |
| Zdroj: | Applied Physics Letters, 16, 97 Applied Physics Letters, 97(16):162103, 162103-1/3. American Institute of Physics |
| ISSN: | 0003-6951 |
| Popis: | Using aluminum oxide (Al2 O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p -type and 8.1 cm/s on n -type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to 3 films. We demonstrate an excellent thermal stability of the passivation quality. © 2010 American Institute of Physics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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