Inverse growth kinetics on InSb(110)
| Autor: | F. Tommasini, M. Peloi, Kevin C. Prince, Dean Cvetko, V. De Renzi, Alberto Morgante, Luca Floreano, Vladimír Cháb |
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| Přispěvatelé: | D., Cvetko, V., De Renzi, L., Floreano, Morgante, Alberto, M., Peloi, Tommasini, Fernando, V., Cháb, K. C., Prince |
| Rok vydání: | 1995 |
| Předmět: |
Nucleation
Crystal growth Island growth Molecular physics Condensed Matter::Materials Science Sputtering Vacancy defect Atom Monolayer semiconductors III-V island nucleation Physics::Atomic and Molecular Clusters Materials Chemistry Coalescence (physics) Chemistry crystal growth epitaxy Inverse growth adatom diffusion Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Crystallography Inverse growth semiconductors III-V |
| Zdroj: | Surface science 323 (1995): L305–L310. doi:10.1016/0039-6028(94)00781-0 info:cnr-pdr/source/autori:D. Cvetko, V. De Renzi, L. Floreano, A. Morgante, M. Peloi, F. Tommasini, V. Chab and K.C. Prince/titolo:Inverse Growth Kinetics on InSb(110)/doi:10.1016%2F0039-6028(94)00781-0/rivista:Surface science/anno:1995/pagina_da:L305/pagina_a:L310/intervallo_pagine:L305–L310/volume:323 |
| ISSN: | 0039-6028 |
| Popis: | Using He atom scattering, layer-by-layer erosion of InSb(110) by low energy ion bombardment has been observed to proceed via nucleation of vacancy islands, island growth and coalescence. The mechanism is in full agreement with theoretical models developed for crystal growth, with diffusing adatoms substituted by diffusing vacancies. In particular it has been observed that coalescence of the vacancy islands sets in after the removal of small fractions of a monolayer and that the average terrace width increases with increasing number of sputtered monolayers. |
| Databáze: | OpenAIRE |
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