Origin of the Low Frequency type Curve in Silicon-on-Sapphire MOS capacitors

Autor:	Karl Bertling, Aleksandar D. Rakić, G. Imthurn, Tran Ho, N. Kistler, Yew-Tong Yeow, M. Stuber, H. Domyo
Předmět:	Materials science Silicon business.industry Silicon on insulator chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY law.invention Capacitor Silicon on sapphire CMOS chemistry Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Optoelectronics Wafer Thin film business Metal gate
Zdroj:	ResearcherID
Popis:	MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wafer. This paper investigates the use of a novel MOS capacitor structure for use with thin film silicon-on-sapphire wafers in order to determine backs surface silicon-sapphire interface quality.
Databáze:	OpenAIRE
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