Integrated rare-Earth doped mode-locked lasers on a CMOS platform

Autor: Franz X. Kärtner, Patrick T. Callahan, Michael R. Watts, Katia Shtyrkova, Jelena Notaros, Neetesh Singh, Ravi Koustuban, Erich P. Ippen, Diedrik Vermeulen, Ming Xin, Nanxi Li, E. Salih Magden
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: SPIE 11 pp. (2018). doi:10.1117/12.2318010
Silicon Photonics: From Fundamental Research to Manufacturing : [Proceedings]-SPIE, 2018.-ISBN 97815106189859781510618992-doi:10.1117/12.2318010
Silicon Photonics: From Fundamental Research to Manufacturing : [Proceedings]-SPIE, 2018.-ISBN 97815106189859781510618992-doi:10.1117/12.2318010Silicon Photonics: from Fundamental Research to Manufacturing, SPIE.Photonics Europe, Strasbourg, France, 2018-04-22-2018-04-26
Popis: Silicon Photonics: From Fundamental Research to Manufacturing : [Proceedings] - SPIE, 2018. - ISBN 97815106189859781510618992 - doi:10.1117/12.2318010 Silicon Photonics: from Fundamental Research to Manufacturing, SPIE.Photonics Europe, Strasbourg, France, 22 Apr 2018 - 26 Apr 2018; SPIE, 11 pp. (2018). doi:10.1117/12.2318010
Mode-locked lasers provide extremely low jitter optical pulse trains for a number of applications ranging from sampling of RF-signals and optical frequency combs to microwave and optical signal synthesis. Integrated versions have the advantage of high reliability, low cost and compact. Here, we describe a fully integrated mode-locked laser architectureon a CMOS platform that utilizes rare-earth doped gain media, double-chirped waveguide gratings for dispersion compensation and nonlinear Michelson Interferometers for generating an artificial saturable absorber to implement additive pulse mode locking on chip. First results of devices at 1.9 µm using thulium doped aluminum-oxide glass and operating in the Q-switched mode locking regime are presented.
Published by SPIE
Databáze: OpenAIRE