Impact-ionization in silicon at large operating temperature
| Autor: | A. Stricker, Giorgio Baccarani, F. Illien, M. Valdinoci, M.C. Vecchi, L. Zullino, D. Ventura, Massimo Rudan |
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| Rok vydání: | 2003 |
| Předmět: |
Work (thermodynamics)
Materials science Silicon business.industry chemistry.chemical_element Atmospheric temperature range Computational physics symbols.namesake Impact ionization Operating temperature chemistry Boltzmann constant symbols Optoelectronics Breakdown voltage Junction temperature business |
| Zdroj: | Scopus-Elsevier |
| DOI: | 10.1109/sispad.1999.799251 |
| Popis: | In this work, electron impact-ionization in silicon is investigated both theoretically and experimentally in the temperature range between 25 and 400/spl deg/C. A new compact model for the impact-ionization coefficient is proposed, which nicely fits the theoretical data from the Boltzmann solver HARM and the available experimental data in the above temperature range. The new model has been validated by simulating the reverse characteristics of junction diodes, and turns out to correctly predict the temperature dependence of breakdown voltage. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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