Sidewall patterning - A new wafer-scale method for accurate patterning of vertical silicon structures
| Autor: | Jurriaan Huskens, Wouter Vijselaar, Pieter Westerik, Johan W. Berenschot, Niels Roelof Tas, Johannes G.E. Gardeniers |
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| Přispěvatelé: | Mesoscale Chemical Systems, Molecular Nanofabrication |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Silicon
chemistry.chemical_element 02 engineering and technology 010402 general chemistry 01 natural sciences Nanofabrication law.invention Etching (microfabrication) law Vertical direction Nanotechnology Retraction edge lithography Wafer Corner lithography Electrical and Electronic Engineering business.industry Mechanical Engineering Wafer scale 021001 nanoscience & nanotechnology 0104 chemical sciences Electronic Optical and Magnetic Materials Nanolithography chemistry Mechanics of Materials Optoelectronics Microfabrication Photolithography 0210 nano-technology business Surface finishing |
| Zdroj: | Journal of micromechanics and microengineering, 28(1):015008. IOP Publishing Ltd. |
| ISSN: | 0960-1317 |
| DOI: | 10.1088/1361-6439/aa9c20 |
| Popis: | For the definition of wafer scale micro- and nanostructures, in-plane geometry is usually controlled by optical lithography. However, options for precisely patterning structures in the out-of-plane direction are much more limited. In this paper we present a versatile self-aligned technique that allows for reproducible sub-micrometer resolution local modification along vertical silicon sidewalls. Instead of optical lithography, this method makes smart use of inclined ion beam etching to selectively etch the top parts of structures, and controlled retraction of a conformal layer to define a hard mask in the vertical direction. The top, bottom or middle part of a structure could be selectively exposed, and it was shown that these exposed regions can, for example, be selectively covered with a catalyst, doped, or structured further. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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