Growth of BiSb on GaAs (001) and (111)A surfaces: A joint experimental and theoretical study
| Autor: | Dima Sadek, Antoine Jay, Jihan El Hila, Quentin Gravelier, Alexandre Arnoult, Rémi Demoulin, Filadelfo Cristiano, Sébastien Plissard, Anne Hémeryck |
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| Přispěvatelé: | Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Équipe Modélisation Multi-niveaux des Matériaux (LAAS-M3), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), ANR-17-PIRE-0001, ANR-17-PIRE-0001,Hybrid,Hybrid Materials for Quantum Science and Engineering(2017) |
| Rok vydání: | 2023 |
| Předmět: |
Topological insulator
Growth modes [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] General Physics and Astronomy Diffusion kinetics Surfaces and Interfaces General Chemistry Semiconductor surfaces and interfaces Condensed Matter Physics Bismuth antimony Surfaces Coatings and Films |
| Zdroj: | Applied Surface Science Applied Surface Science, 2023, 622, pp.156688. ⟨10.1016/j.apsusc.2023.156688⟩ |
| ISSN: | 0169-4332 |
| Popis: | International audience; The integration of the BiSb topological insulator on GaAs is studied both experimentally and theoretically on (001) and (111)A surfaces. The molecular beam epitaxy of thin Bi0.9Sb0.1 layer on both substrates leads to the observation of different growth modes: Volmer Weber for GaAs(001) and Stranski–Krastanov for GaAs (111)A. By first principles calculations, we corroborate these observations. On the (001) surface at the early stages of deposition, we show that Bi atoms diffuse more easily until they agglomerate to form isolated islands on the surface, favoring a 3D growth. Here, each island can have an independent growth direction. On contrary, the diffusion of Bi atoms on the (111)A surface is limited: it is favorable for Bi atoms to bond directly with GaAs, creating thus a wetting layer before a further Stranski–Krastanov growth. |
| Databáze: | OpenAIRE |
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