A GaN HEMT driver IC with programmable slew rate and monolithic negative gate-drive supply and digital current-mode control

Autor:	R. van Otten, Matthias Rose, Ryan Fernandes, Henk Jan Bergveld, Olivier Trescases, Yue Wen
Přispěvatelé:	Control Systems, Dynamics and Control for Electrified Automotive Systems
Jazyk:	angličtina
Rok vydání:	2015
Předmět:	Engineering business.industry Control theory Electrical engineering Electronic engineering Schottky diode Slew rate Power factor Cascode High-electron-mobility transistor business Chip 500 kHz
Zdroj:	Proc. IEEE 2015 27th Int. Symposium on Power Semiconductor Devices and IC's (ISPSD), 10-14 May 2015, Hong Kong, 361-364 STARTPAGE=361;ENDPAGE=364;TITLE=Proc. IEEE 2015 27th Int. Symposium on Power Semiconductor Devices and IC's (ISPSD), 10-14 May 2015, Hong Kong
DOI:	10.1109/ispsd.2015.7123464
Popis:	This work presents an intelligent driver IC for 400 V GaN-based Power Factor Correction (PFC) applications. The targeted power level of the converter is 100 W, with a switching frequency above 500 kHz. The IC was implemented in a 140 nm automotive BCD SOI process, while the GaN HEMT and Schottky diode were optimized in a Si-fab compatible GaN-on-Si process. A low-R on DMOS is integrated in the driver IC to achieve high-speed cascode switching operation. The chip also features a novel dual-mode drive scheme with monolithic negative drive voltage capability and programmable slew rate, as well as a digital peak current-mode controller. Advanced digital PFC control schemes can therefore be implemented, while EMC performance and efficiency can be optimized through active slope control.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99d764130fa204b2b9faf95935175831 https://doi.org/10.1109/ispsd.2015.7123464 Zobrazit plný text záznamu