The effect of hot phonons on the drift velocity in GaN/AlGaN two dimensional electron gas
| Autor: | S. Gökden |
|---|---|
| Přispěvatelé: | Fen Edebiyat Fakültesi |
| Rok vydání: | 2004 |
| Předmět: |
Electron mobility
education.field_of_study Hot Phonon Drift velocity Materials science Condensed matter physics Phonon Velocity saturation Population Electron Drift Velocity Condensed Matter Physics Atomic and Molecular Physics and Optics Gan Electronic Optical and Magnetic Materials Momentum Condensed Matter::Materials Science Electric field education |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 23:198-203 |
| ISSN: | 1386-9477 |
| Popis: | Gökden, Sibel (Balikesir Author) We present the effect of hot-phonon production on the high-field drift velocity in the steady state in GaN/AlGaN heterostructures. The results are compared with a model taking into account the effect of hot phonon production on the high-field transport of electrons. Experimental results show that the drift velocity saturates at around v(d) approximate to 3.8 x 10(5) cm/s at an electric field of F approximate to 8.9 x 10(2) V/cm at 3.8 K. The theoretical calculations show that the enhancement of the momentum relaxation rate due to the production of non-drifting hot phonons reduces the drift velocity at high field. The reduction in the drift velocity increases with increasing population of non-drifting non-equilibrium phonons (LO phonons). |
| Databáze: | OpenAIRE |
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