Electrothermal modeling of multi-fingered PHEMTs applying a global approach
| Autor: | Raymond Quéré, Pierre Guillon, Dominique Baillargeat, M. Soulard, E. Laporte, Raphaël Sommet, David Lopez, E. Byk, Serge Verdeyme |
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| Přispěvatelé: | Sommet, Raphael, Institut de Recherche en Communications Optiques et Microondes (IRCOM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2002 |
| Předmět: |
Coupling
Computer science Thermal resistance 020208 electrical & electronic engineering Transistor 020206 networking & telecommunications Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Large-signal model Method of moments (statistics) 7. Clean energy Finite element method [SPI.TRON] Engineering Sciences [physics]/Electronics law.invention [SPI.TRON]Engineering Sciences [physics]/Electronics Computer Science::Hardware Architecture Computer Science::Emerging Technologies Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Computational electromagnetics Scaling |
| Zdroj: | Microwave Symposium Digest, 2002 IEEE MTT-S International Microwave Symposium Digest, 2002 IEEE MTT-S International, 2002, Unknown, Unknown Region. pp.2085--2088 |
| Popis: | In this paper, a global method is proposed to characterize the electrothermal behavior of multi-fingered Pseudomorphic High Electron-Mobility Transistors (PHEMTs). The method is based on the coupling of circuit, electromagnetic and thermal softwares. It is shown that scaling rules have just to be applied for intrinsic performances of a transistor when extrinsic elements and thermal effects are rigorously taken into account. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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