| Autor: |
E.H. te Kaat, Günter Zimmer, J. Belz, Holger Vogt |
| Přispěvatelé: |
Publica |
| Rok vydání: |
1987 |
| Předmět: |
|
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :279-284 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/s0168-583x(87)80057-5 |
| Popis: |
High temperature (420-450 degrees C) N2+-implantations at 300 keV (150 keV per atom) into high resistivity p-type (001)-silicon substrates yield buried amorphous SiNx-layers for N-doses ranging from .1 to 1 x E18 cm-2. Thermal anneal at 1200 degrees C in dry N2-atmosphere leads to epitaxial crystallization of the silicon matrix with embedded SiNx-precipitates of three different orientations relative to the Si-matrix. At high doses these nitride grains eventually form a continuous insulating alpha-Si3N4 layer. Detailed optical, AES and TEM investigations have been performed to study the nucleation and grain growth for different N-concentrations in the profile maximum. The main topic of this paper is the structural TEM analysis of the early stages of grain growth. (IMS) |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
