First assemblies using Deep Trench Termination diodes

Autor: Eric Woirgard, Jean-Yves Deletage, Stephane Azzopardi, L. Theolier, Francois Le Henaff, F. Baccar
Přispěvatelé: Fiabilité / Puissance, Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, ANR 2011 BS09 033,ANR 2011 BS09 033
Rok vydání: 2014
Předmět:
Zdroj: The 26th International Symposium on Power Semiconductor Devices and ICs (ISPSD'14)
The 26th International Symposium on Power Semiconductor Devices and ICs (ISPSD'14), Jun 2014, Waikoloa, United States. pp.143-146, ⟨10.1109/ISPSD.2014.6855996⟩
Popis: International audience; In this paper, diodes manufactured in 2008, allowing to obtain the first electrical measurements of the Deep Trench Termination (DT2), are analyzed in a reliability purpose. For the first time, assemblies are made using DT2 diodes reported on Direct Bonded Copper (DBC) substrates using silver sintering process in order to confirm the possibility to integrate this technology in future lead-free packaging. Indeed, geometric singularities and different mechanical properties of BenzoCycloButen (BCB) and silicon could weaken the chip. In order to confirm the device electrical stability, passive thermal ageing are achieved. Then, breakdown voltage measurements, optical observations and TCAD-SENTAURUS simulations are investigated in order to provide explanation of the induced phenomenon linked to the aging.
Databáze: OpenAIRE