The initial stages of ZnO atomic layer deposition on atomically flat In 0.53 Ga 0.47 As substrates
| Autor: | Evgeniy V. Skopin, Jean-Luc Deschanvres, Hubert Renevier, Laetitia Rapenne, Hervé Roussel, Marie-Ingrid Richard, Dillon D. Fong, Elisabeth Blanquet, G. Ciatto |
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| Přispěvatelé: | Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Insulator (electricity) 02 engineering and technology [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology 01 natural sciences Synchrotron law.invention Amorphous solid Atomic layer deposition Semiconductor law 0103 physical sciences Surface roughness Optoelectronics General Materials Science 0210 nano-technology business Quantum tunnelling ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Nanoscale Nanoscale, Royal Society of Chemistry, 2018, ⟨10.1039/c8nr02440e⟩ Nanoscale, 2018, ⟨10.1039/c8nr02440e⟩ |
| ISSN: | 2040-3364 2040-3372 |
| Popis: | InGaAs is one of the III-V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal-semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest. Here, a complementary suite of in situ synchrotron X-ray techniques (fluorescence, reflectivity and absorption) as well as modeling is used to investigate both structural and chemical evolution during the initial growth of ZnO by atomic layer deposition (ALD) on In0.53Ga0.47As substrates. Prior to steady-state growth behavior, we discover a transient regime characterized by two stages. First, substrate-inhibited ZnO growth takes place on InGaAs terraces. This leads eventually to the formation of a 1 nm-thick, two-dimensional (2D) amorphous layer. Second, the growth behavior and its modeling suggest the occurrence of dense island formation, with an aspect ratio and surface roughness that depends sensitively on the growth condition. Finally, ZnO ALD on In0.53Ga0.47As is characterized by 2D steady-state growth with a linear growth rate of 0.21 nm cy-1, as expected for layer-by-layer ZnO ALD. |
| Databáze: | OpenAIRE |
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