State of the art of pattern placement accuracy of silicon X-ray master masks
| Autor: | K. Kohlmann, W. Windbracke, Ch. Ehrlich, Ulrich Mescheder, S. Pongratz, H.-L. Huber |
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| Přispěvatelé: | Publica |
| Rok vydání: | 1989 |
| Předmět: |
masks
business.industry Computer science System of measurement Resolution (electron density) silicon Overlay Condensed Matter Physics X-ray lithography Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Nonlinear system Optics Digital pattern generator Static random-access memory elemental semiconductors Electrical and Electronic Engineering business Lithography Algorithm Dram |
| Zdroj: | Microelectronic Engineering. 9:117-120 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(89)90027-0 |
| Popis: | A further increase in the integration density of SRAM and DRAM memories will be limited by resolution as well as overlay accuracy. In the case of synchrotron-based X-ray lithography, the main contribution to the total overlay budget is given by the achievable accuracy of the X-ray masks. In this paper, the pattern placement accuracy of silicon X-ray master masks will be shown, which are fabricated for real device application. The measurement results are obtained with an optimized and improved e-beam measurement system and discussed in terms of linear and nonlinear pattern placement errors. Considering a number of X-ray master masks with different absorber coverage within the step and repeat field (3 × 3 cm 2 ) and different levels of complexity, the average pattern placement error including both statistical and linear contributions can be reduced reproducibly down to about 70 nm, including the principal accuracy of the e-beam pattern generator and measurement system. |
| Databáze: | OpenAIRE |
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