Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops
| Autor: | Ehab A. Hamed, Inhee Lee |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
dual interlocked storage cell (DICE)
TK7800-8360 Computer Networks and Communications Computer science Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Radiation radiation-hardened-by-design (RHBD) Fault (power engineering) 01 natural sciences flip-flop (FF) 0103 physical sciences single event transient (SET) 0202 electrical engineering electronic engineering information engineering Overhead (computing) Electrical and Electronic Engineering linear energy transfer (LET) single event upset (SEU) 010308 nuclear & particles physics Reference design 020207 software engineering FLOPS Reliability engineering Soft error Categorization Transmission gate Hardware and Architecture Control and Systems Engineering Signal Processing Electronics Hardware_LOGICDESIGN |
| Zdroj: | Electronics, Vol 10, Iss 1572, p 1572 (2021) |
| ISSN: | 2079-9292 |
| DOI: | 10.3390/electronics10131572 |
| Popis: | In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design. |
| Databáze: | OpenAIRE |
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