Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics

Autor: S. Schamm-Chardon, Pierre-Eugène Coulon, S. Baldovino, Marco Fanciulli, Luca Lamagna, Claudia Wiemer
Přispěvatelé: Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratorio MDM (IMM-CNR), Consiglio Nazionale delle Ricerche [Roma] (CNR), STREP 16172: REALISE, European Project: STREP 16172: REALISE,REALISE, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Schamm Chardon, S, Coulon, P, Lamagna, L, Wiemer, C, Baldovino, S, Fanciulli, M
Rok vydání: 2011
Předmět:
Atomic and Molecular Physics
and Optic
Oxide
Analytical chemistry
Surfaces
Coatings and Film
La-doped ZrO2
02 engineering and technology
Dielectric
Electron energy loss spectroscopy (EELS)
01 natural sciences
Capacitance
chemistry.chemical_compound
Atomic layer deposition
Capacitance-voltage measurement
High-k dielectric stacks on Si and Ge
0103 physical sciences
Dielectric constant
Electrical measurements
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Electrical and Electronic Engineering
Thin film
High-resolution transmission electron microscopy
High-κ dielectric
[PHYS]Physics [physics]
010302 applied physics
Chemistry
Electronic
Optical and Magnetic Material
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics
and Optics
Surfaces
Coatings and Films
Electronic
Optical and Magnetic Materials
Permittivity
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Erdoped HfO2
Aberration corrected high resolution transmission electron microscopy (HRTEM)
0210 nano-technology
Nanoanalytical electron microscopy
Zdroj: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.419-422. ⟨10.1016/j.mee.2010.10.012⟩
Microelectronic Engineering, 2011, 88 (4), pp.419-422. ⟨10.1016/j.mee.2010.10.012⟩
Microelectronic engineering 88 (2011): 419–422.
info:cnr-pdr/source/autori:Schamm-Chardon S, Coulon PE, Lamagna L, Wiemer C, Baldovino S, Fanciulli M/titolo:Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics/doi:/rivista:Microelectronic engineering/anno:2011/pagina_da:419/pagina_a:422/intervallo_pagine:419–422/volume:88
ISSN: 0167-9317
1873-5568
DOI: 10.1016/j.mee.2010.10.012
Popis: Aberration corrected transmission electron microscopy and electron spectroscopy are combined with electrical measurements for the quantitative description of the structural, chemical and dielectric parameters of rare earth/transition metal oxides thin films. Atomic structure near the interface and elemental profiles across the interface up to the surface of La-doped ZrO2 and Er-doped HfO2 films prepared by atomic layer deposition on Si(100) and Ge(100) are determined. Interfacial layers unavoidably form between the semiconductor substrate and the dielectric oxide after deposition and annealing. They are evidenced from a structural and chemical point of view. From the knowledge of the chemical extent of the interfacial layer and of the accumulation capacitance of the stack, it is possible to recover the dielectric constant of both the interfacial layer and the high-κ oxide layer constituting the stack using a multi-layers capacitor model approach. Oxides with permittivities higher than 30 are stabilized. Interfacial layers, silicate/germanate in composition, with permittivites, respectively, tripled/doubled compared to the one of SiO2 are evidenced. © 2010 Elsevier B.V. All rights reserved.
Databáze: OpenAIRE
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