Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers
| Autor: | N.Y. Tang |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Electron density
Materials science Condensed matter physics Spin polarization Resonant-tunneling diode Charge density Spin polarized scanning tunneling microscopy Heterojunction Magnetic semiconductor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Polarization (waves) Electronic Optical and Magnetic Materials Tunnel magnetoresistance Ferromagnetism Condensed Matter::Strongly Correlated Electrons |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 321:L41-L44 |
| ISSN: | 0304-8853 |
| DOI: | 10.1016/j.jmmm.2009.02.049 |
| Popis: | The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current–voltage ( I–V ) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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