Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy
| Autor: | J. M. Elzerman, F. Nakajima, Takashi Fukui, S. De Franceschi, Leo P. Kouwenhoven, W. G. van der Wiel, Y Ogasawara, Junichi Motohisa |
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| Jazyk: | angličtina |
| Rok vydání: | 2002 |
| Předmět: |
Coupling
Materials science Condensed matter physics business.industry Coulomb oscillation Kondo effect Resonance Coulomb blockade Single electron transistor Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Quantum dot Selective-area metalorganic vapor phase epitaxy Optoelectronics business Science technology and society Quantum tunnelling 421.3 |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 13(2-4):687-690 |
| ISSN: | 1386-9477 |
| Popis: | We describe transport measurements in a novel dual-gated single electron transistor based on a quantum dot (QD) fabricated by selective area growth of metalorganic vapor phase epitaxy. We observed, for the :rst time, clear Coulomb oscillations fabricated in combination with direct growth and lithographically de:ned metal gates, and achieved nearly independent control of the QD potential and the tunneling barrier height. We also were able to observe a signature of Kondo resonance when the coupling between leads and a quantum dot was su |
| Databáze: | OpenAIRE |
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