Impact of Technology on CNTFET-based Circuits Performance
| Autor: | A. G. Perri, R. Marani |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
ADS Time domain analysis CNTFET-based circuits Digital circuits Simulation ADS CNTFET-based circuits Digital circuits Hardware_PERFORMANCEANDRELIABILITY Parasitic element Electronic Optical and Magnetic Materials Carbon nanotube field-effect transistor Time-domain simulations Hardware_INTEGRATEDCIRCUITS Electronic engineering Simulation Electronic circuit |
| Zdroj: | ECS Journal of Solid State Science and Technology 9 (2020). doi:10.1149/2162-8777/ab9185 info:cnr-pdr/source/autori:Marani R.; Perri A.G./titolo:Impact of Technology on CNTFET-Based Circuits Performance/doi:10.1149%2F2162-8777%2Fab9185/rivista:ECS Journal of Solid State Science and Technology/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:9 |
| DOI: | 10.1149/2162-8777/ab9185 |
| Popis: | In this paper we present a study of the impact of technology on the CNTFET-based circuits performance. In particular we show the layout of a NOT gate, used as block to build a chain of NOT and a ring oscillator. Then we present the time domain simulations of these circuits in order to see how the parasitic elements could limit the high-speed performances of CNTFETs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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