New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices
| Autor: | M. Kutrzeba, N. Huby, Grazia Tallarida, S. Ferrari, Łukasz Wachnicki, Elzbieta Guziewicz, Marek Godlewski |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Fabrication business.industry Schottky barrier chemistry.chemical_element Schottky diode Nanotechnology Zinc Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Non-volatile memory Atomic layer deposition ZNO THIN-FILMS chemistry law CONTACTS Optoelectronics Electrical and Electronic Engineering Photolithography business Ohmic contact |
| Zdroj: | Microelectronic engineering 85 (2008): 2442–2444. doi:10.1016/j.mee.2008.07.016 info:cnr-pdr/source/autori:Huby, N; Tallarida, G; Kutrzeba, M; Ferrari, S; Guziewicz, E; Wachnicki, L; Godlewski, M/titolo:New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices/doi:10.1016%2Fj.mee.2008.07.016/rivista:Microelectronic engineering/anno:2008/pagina_da:2442/pagina_a:2444/intervallo_pagine:2442–2444/volume:85 |
| ISSN: | 0167-9317 |
| Popis: | We report on the fabrication of Schottky diodes based on n-type zinc oxide (ZnO) grown by atomic layer deposition (ALD) at low temperature (100 degrees C). These structures are suitable as selector elements in highly integrated non volatile memories based on crossbar architecture. The junctions are fully realized by optical lithography and the smallest investigated structures are 3 x 3 micron^2 area. Several metals have been tested to single out the most suitable ohmic and Schottky contact materials. The electrical characterisation shows good Properties with a forward current above 10^4 A/cm^2 and a rectifying ratio of 10^5. (C) 2008 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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