| Autor: |
Yuri V. Gomeniuk, Alexei Nazarov, Vladimir Lysenko, Hans Jörg Osten, Apurba Laha |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
ECS Meeting Abstracts. :2139-2139 |
| ISSN: |
2151-2043 |
| Popis: |
The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
