The C-V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature
| Autor: | Faruk Ozel, Adem Sarilmaz, Murat Yıldırım, Adem Kocyigit, Hayreddin Küçükçelebi |
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| Přispěvatelé: | Selçuk Üniversitesi, Fen Fakültesi, Fizik Bölümü, Küçükçelebi, Hayreddin., Yıldırım, Murat., Sarılmaz, Adem, Özel, Faruk |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Spin coating Materials science Equivalent series resistance wide range temperature Analytical chemistry Conductance Heterojunction Condensed Matter Physics 01 natural sciences Capacitance Cu2WSe4/p-Si Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Capacitor law 0103 physical sciences C-V characteristics Charge carrier Electrical and Electronic Engineering Voltage |
| Popis: | WOS: 000475587800016 Cu2WSe4 nanosheets were synthesized by hot-injection method and employed as interfacial layers between the p-Si and Au metal via spin coating technique. The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed on the Cu2WSe4/p-Si heterojunction device depending on wide range temperatures from 80 to 400K by 40 K steps. The device exhibited decreasing capacitance behavior with increasing temperature at the inversion region because of the interface states and series resistance. The conductance values increased with increasing temperature owing to increasing free charge carriers. The series resistance (R-s) and interface states density (N-ss) were extracted from C-V and G-V measurements and discussed in the details. The results highlighted that the electrical parameters are a strong function of the voltage and temperature. The Au/Cu2WSe4/p-Si device can be employed for controllable capacitor applications. Selcuk University BAP officeSelcuk University [17401159]; Karamanoglu Mehmetbey UniversityKaramanoglu Mehmetbey University [32-M-16] The authors would like to thank to Selcuk University BAP office (Project Number 17401159) and Karamanoglu Mehmetbey University (Grand Number: 32-M-16) for Scientific Research Foundation. |
| Databáze: | OpenAIRE |
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