Te implantation in Ge(001) for n-type doping applications
| Autor: | Michael Texier, M. Bertoglio, Sandrine Bernardini, Alain Portavoce, K. Hoummada, J. Perrin Toinin, Lee Chow |
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| Přispěvatelé: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), University of Manchester Institute of Science and Technology (UMIST) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Dopant Annealing (metallurgy) Mechanical Engineering Doping chemistry.chemical_element Germanium 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Ion Amorphous solid Crystallography chemistry Mechanics of Materials 0103 physical sciences [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] General Materials Science Dislocation [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology Tellurium ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Materials Science in Semiconductor Processing Materials Science in Semiconductor Processing, Elsevier, 2016, 42 (2, SI), pp.215-218. ⟨10.1016/j.mssp.2015.07.082⟩ Materials Science in Semiconductor Processing, Elsevier, 2016, 42, pp.215-218. ⟨10.1016/j.mssp.2015.07.082⟩ Materials Science in Semiconductor Processing, 2016, 42 (2, SI), pp.215-218. ⟨10.1016/j.mssp.2015.07.082⟩ |
| ISSN: | 1369-8001 |
| Popis: | E-MRS Spring Meeting 2015 Z entitled NanoMaterials and Processes for Advanced Semiconductor CMOS devices, Lille, FRANCE, MAY 11-14, 2015; International audience; 5 x 10(15) Te+ ions cm(-2) were implanted in an Ge(001) substrate using an industrial implanter with a Te+ beam energy of 180 key. In addition to usual implantation-mediated defects observed in Ge with usual dopants, Te implantations lead to the formation of amorphous surface GeO clusters exhibiting micrometer scale sizes, as well as deep extended defects. Implantation defects promote the formation of two distributions of dislocation loops and clusters located at two different depths in the Ge substrate during annealing. No interactions between Te atoms and dislocation loops were observed. However, the formation of non-equilibrium Te-Ge clusters, probably mediated by Ge self-interstitials, was found to prevent the Te solubility to exceed similar to 5 x 10(19) cm(-3) in Ge. The regular implantation method is shown to be ineffective for the production of high level n-type Ge doping using Te, due to the important Ge damage caused by Te implantation. (C) 2015 Elsevier Ltd. All rights reserved. |
| Databáze: | OpenAIRE |
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