Properties of CrSi2 Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon
Autor: | V. A. Lapitskaya, Sergei M. Aizikovich, Jaroslav Solovjov, Sergei A. Chizhik, Tatyana A. Kuznetsova, Vladimir Pilipenko |
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Jazyk: | angličtina |
Rok vydání: | 2021 |
Předmět: |
inorganic chemicals
Materials science Silicon General Chemical Engineering chemistry.chemical_element 02 engineering and technology Surface finish Thermal treatment 010402 general chemistry 01 natural sciences Specific surface energy Article Chromium Electrical resistivity and conductivity silicon substrate General Materials Science Composite material QD1-999 roughness chromium disilicide Sputter deposition rapid thermal treatment 021001 nanoscience & nanotechnology Grain size 0104 chemical sciences Chemistry chemistry thin films chromium 0210 nano-technology |
Zdroj: | Nanomaterials Volume 11 Issue 7 Nanomaterials, Vol 11, Iss 1734, p 1734 (2021) |
ISSN: | 2079-4991 |
DOI: | 10.3390/nano11071734 |
Popis: | The changes in the morphology and the electrophysical properties of the Cr/n-Si (111) structure depending on the rapid thermal treatment were considered in this study. The chromium films of about 30 nm thickness were deposited via magnetron sputtering. The rapid thermal treatment was performed by the irradiation of the substrate’s back side with the incoherent light flux of the quartz halogen lamps in nitrogen medium up to 200–550 °C. The surface morphology was investigated, including the grain size, the roughness parameters and the specific surface energy using atomic force microscopy. The resistivity value of the chromium films on silicon was determined by means of the four-probe method. It was established that at the temperatures of the rapid thermal treatment up to 350 °C one can observe re-crystallization of the chromium films with preservation of the fine grain morphology of the surface, accompanied by a reduction in the grain sizes, specific surface energy and the value of specific resistivity. At the temperatures of the rapid thermal treatment from 400 to 550 °C there originates the diffusion synthesis of the chromium disilicide CrSi2 with the wave-like surface morphology, followed by an increase in the grain sizes, roughness parameters, the specific surface energy and the specific resistivity value. |
Databáze: | OpenAIRE |
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