Hydrogen plasma etching of diamond films deposited on graphite
| Autor: | J. I. B. Wilson, I. Villalpando, Samuele Porro, Phillip John |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Mechanical Engineering technology industry and agriculture Analytical chemistry chemistry.chemical_element Diamond General Chemistry Chemical vapor deposition engineering.material Electronic Optical and Magnetic Materials symbols.namesake Carbon film X-ray photoelectron spectroscopy chemistry Etching (microfabrication) Materials Chemistry symbols engineering Electrical and Electronic Engineering Reactive-ion etching Raman spectroscopy Carbon |
| Zdroj: | Diamond and Related Materials. 20:711-716 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2011.03.007 |
| Popis: | Poly- and nanocrystalline diamond films have been deposited using microwave plasma enhanced CVD with gas mixtures of x%CH4/15%H2/Ar (x = 0.5, 1, 3, and 5). After deposition the resulting films were exposed to a hydrogen plasma etching for 30 min. The hydrogen plasma produced preferential etching of non-diamond carbon on the surface of the samples and the development of steps and pits. Raman spectroscopy and X-ray photoelectron spectroscopy analyses on the etched films showed increased sp3/sp2 ratio and decreased surface oxygen. The etch mechanism proposed is regression of pre-existing steps and step flow. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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