Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials
| Autor: | Maxime Darnon, Thierry Chevolleau, Christophe Licitra, Laurent Vallier, Nicolas Posseme, Joaquim Torres, J. Ducote, Olivier Joubert, T. David |
|---|---|
| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Clot, Marielle |
| Rok vydání: | 2008 |
| Předmět: |
inorganic chemicals
010302 applied physics Materials science Analytical chemistry chemistry.chemical_element Infrared spectroscopy 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences chemistry Chemical engineering X-ray photoelectron spectroscopy Ellipsometry 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology Porous medium Hybrid material Carbon Plasma ashing ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Journal of Vacuum Science and Technology Journal of Vacuum Science and Technology, 2008, pp.B 26, 1964-1970 Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2008, pp.B 26, 1964-1970 |
| ISSN: | 1520-8567 1071-1023 0022-5355 |
| Popis: | This work focuses on the impact of oxidizing (O2) and reducing plasma ashing chemistries (NH3, CH4) on the modifications of dielectric materials in a porous or an hybrid state (SiOCH matrix+porogen). The plasma ashing processes have been performed on blanket wafers using O2, NH3, and CH4 based plasmas. The modifications of the remaining film after plasma exposures have been investigated using different analysis techniques such as x-ray photoelectron spectroscopy, infrared spectroscopy, x-ray reflectometry, and porosimetric ellipsometry. For the porous material the authors have shown that NH3 and O2 plasmas induce carbon depletion and moisture uptake while the CH4 plasma only leads to important carbon depletion without moisture uptake and to the formation of a thin carbon layer on the surface. For the hybrid material, no significant material modification is evidenced with the O2 plasma while an important methyl depletion and porogen degradation are observed with reducing chemistries such as CH4 and NH3 plasmas. The impact of the porogen on the film modification and the value of the dielectric constant will be presented and discussed.This work focuses on the impact of oxidizing (O2) and reducing plasma ashing chemistries (NH3, CH4) on the modifications of dielectric materials in a porous or an hybrid state (SiOCH matrix+porogen). The plasma ashing processes have been performed on blanket wafers using O2, NH3, and CH4 based plasmas. The modifications of the remaining film after plasma exposures have been investigated using different analysis techniques such as x-ray photoelectron spectroscopy, infrared spectroscopy, x-ray reflectometry, and porosimetric ellipsometry. For the porous material the authors have shown that NH3 and O2 plasmas induce carbon depletion and moisture uptake while the CH4 plasma only leads to important carbon depletion without moisture uptake and to the formation of a thin carbon layer on the surface. For the hybrid material, no significant material modification is evidenced with the O2 plasma while an important methyl depletion and porogen degradation are observed with reducing chemistries such as CH4 and NH3 pla... |
| Databáze: | OpenAIRE |
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