Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Autor: Orhan Özdemir, Hanife Baş, Neslihan Ayarcı Kuruoğlu, Kutsal Bozkurt, Mustafa Aydın, Fahrettin Sarcan, Ayşe Erol, Bandar Alshehri, Karim Dogheche, Elhadj Dogheche
Přispěvatelé: Yildiz Technical University (YTU), Istanbul University, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Optoélectronique - IEMN (OPTO - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université Polytechnique Hauts-de-France (UPHF), This work was supported by a Research Fund of the Yildiz Technical University under contract number FBA-2022-4983. We acknowledge the Support from the Saudi Cultural Attaché, Bureau Culturel Saoudien, Ambassade d'Arabie Saoudite à Paris, France.
Rok vydání: 2023
Předmět:
Zdroj: Journal of Luminescence
Journal of Luminescence, 2023, 257, pp.119749. ⟨10.1016/j.jlumin.2023.119749⟩
ISSN: 0022-2313
1872-7883
DOI: 10.1016/j.jlumin.2023.119749
Popis: International audience; Temperature-dependent photoluminescence (PL) and surface photovoltage (SPV) measurements were carried out to detect radiative and non-radiative transitions on InGaN/GaN quantum well (QW) blue light-emitting device (LED). The emissions, peaking at 3.03 eV and 2.89 eV, were present in both PL and SPV spectrum and shifted with the temperature in a decrease-increase-decrease manner; the so-called S-shaped behavior between 30-150 K. Remarkably, the shift continued with an increase in energy (blue shift) and finally saturated for a temperature above 150 K. The first variation below 150 K was explained by the composition fluctuation of In atom in the InGaN MQW layer. In contrast, the second significant shift in peak energy was caused to the localization effect, around 60 meV. The degree of localized (σ) value agreed with the activation energy of thermal quenching of PL intensity. A strong localization effect was also attributed to the sub-bandgap trap level in the quantum well and originated negative capacitance in admittance spectroscopy measurement.
Databáze: OpenAIRE
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