Diameter and Polarization-Dependent Raman Scattering Intensities of Semiconductor Nanowires
| Autor: | Lincoln J. Lauhon, Francisco J. Lopez, Jerome K. Hyun, Aaron L. Holsteen, In Soo Kim, Uri Givan |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Scattering Mechanical Engineering Nanowire Physics::Optics Bioengineering General Chemistry Condensed Matter Physics Polarization (waves) Molecular physics symbols.namesake Semiconductor X-ray Raman scattering symbols Optoelectronics General Materials Science business Raman spectroscopy Single crystal Raman scattering |
| Zdroj: | Nano Letters. 12:2266-2271 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/nl204537d |
| Popis: | Diameter-dependent Raman scattering in single tapered silicon nanowires is measured and quantitatively reproduced by modeling with finite-difference time-domain simulations. Single crystal tapered silicon nanowires were produced by homoepitaxial radial growth concurrent with vapor-liquid-solid axial growth. Multiple electromagnetic resonances along the nanowire induce broad band light absorption and scattering. Observed Raman scattering intensities for multiple polarization configurations are reproduced by a model that accounts for the internal electromagnetic mode structure of both the exciting and scattered light. Consequences for the application of Stokes to anti-Stokes intensity ratio for the estimation of lattice temperature are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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