n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis
| Autor: | Delfina Muñoz, S. Martín de Nicolás, J. Coignus, W. Favre, Jean-Paul Kleider |
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| Přispěvatelé: | Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), SCM - Equipe Semiconducteurs en Couches Minces, Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Amorphous silicon
Materials science 02 engineering and technology 7. Clean energy 01 natural sciences Polymer solar cell law.invention Monocrystalline silicon chemistry.chemical_compound law 0103 physical sciences Solar cell Crystalline silicon 010302 applied physics Renewable Energy Sustainability and the Environment business.industry Nanocrystalline silicon Heterojunction 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Solar Energy Materials and Solar Cells Solar Energy Materials and Solar Cells, 2013, 115, pp.129-137. ⟨10.1016/j.solmat.2013.03.010⟩ Solar Energy Materials and Solar Cells, Elsevier, 2013, 115, pp.129-137. ⟨10.1016/j.solmat.2013.03.010⟩ |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2013.03.010⟩ |
| Popis: | International audience; In this work, we focus on the comprehension and optimization of the rear side of n-type amorphous/crystalline (a-Si:H/c-Si) heterojunction solar cells. The back amorphous stack and the role of the heterointerface have been investigated in order to elucidate the basic mechanisms governing device performance. Thus, thin amorphous silicon films with different phosphorous contents have been deposited by PECVD and extensively characterised (optical, electrical, and structural properties have been studied). Moreover, the passivation and the interface properties of such different a-Si:H thin films on crystalline silicon surface have been also investigated by Quasi-Steady-State Photoconductance (QSSPC) measurements. The effect of the doping content of the amorphous back-surface-field was deeply analysed and simulated in order to explain the observed tendencies on solar cell precursors. The influence of defect density and activation energy on the carrier transport properties varying with the doping of thin a-Si:H layers has been widely investigated. Furthermore, optimized heterojunction solar cells have been fabricated and an efficiency of 20.5% on n-type 148 cm2 silicon wafer has been achieved. |
| Databáze: | OpenAIRE |
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