Blue-green buried-ridge laser diodes
| Autor: | J.M. DePuydt, G. E. Hofler, Supratik Guha, H. Cheng, B. J. Wu, M.S. Hagedorn, P.F. Baude, M. A. Haase, J. Qiu |
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| Rok vydání: | 2005 |
| Předmět: |
3D optical data storage
Materials science business.industry Heterojunction Laser Electronic Optical and Magnetic Materials Gallium arsenide law.invention Semiconductor laser theory chemistry.chemical_compound Optics chemistry law Optoelectronics Electrical and Electronic Engineering business Quantum well Diode Molecular beam epitaxy |
| Zdroj: | 51st Annual Device Research Conference. |
| DOI: | 10.1109/drc.1993.1009630 |
| Popis: | Summary form only given. An attempt is being made to develop short wavelength (green and blue) laser diodes with performance suitable for use in optical data storage systems. Buried-ridge laser diodes operating in the blue-green ( lambda =511 nm) are reported. The starting material is a separate-confinement heterostructure consisting of a strained, pseudomorphic CdZnSe quantum well, ZnSSe light-guiding layers, and MgZnSSe cladding layers. The II-VI layers are grown by MBE (molecular beam epitaxy) and are nominally lattice-matched to the GaAs substrate. Ridges, typically 2 or 3 mu m wide, are formed using ion beam etching, and are subsequently buried with ZnS in a self-aligned process that results in a planar surface. Laser diodes with room-temperature pulsed threshold currents of 2.5 mA have been obtained. Single lateral model operation is indicated by the far-field pattern of these devices. > |
| Databáze: | OpenAIRE |
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