Electronic structure of InAs/GaSb superlattice for the modelling of MWIR pin photodiode
| Autor: | Julien Jaeck, M. Carras, Philippe Christol, Riad Haïdar, M. Delmas, V. Trinite, E. Giard, J. Imbert, Jean-Baptiste Rodriguez, Sophie Derelle |
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| Přispěvatelé: | Institut de Biologie du Développement de Marseille (IBDM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics business.industry Band gap Superlattice Electronic structure Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode law.invention [SPI.TRON]Engineering Sciences [physics]/Electronics Wavelength Effective mass (solid-state physics) law 0103 physical sciences Density of states Optoelectronics 010306 general physics business Electronic band structure ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Infrared Physics and Technology Infrared Physics and Technology, Elsevier, 2015, 70, pp.81-86. ⟨10.1016/j.infrared.2014.09.035⟩ Infrared Physics and Technology, 2015, 70, pp.81-86. ⟨10.1016/j.infrared.2014.09.035⟩ |
| ISSN: | 1350-4495 |
| Popis: | An 18-band k.p formalism has been developed to determine the band structure and wavefunctions of InAs/GaSb type II superlattices (T2SL). Bandgap results are in good agreement with measurements for symetrical superlattices. Thus, we are able to calculate intrinsic properties of InAs/GaSb SL as the effective mass, the density of state and the free carrier concentration. Then we compare the modelled and measured electro-optical properties of three different SL structures with a different InAs to GaSb thickness ratio R per SL period, but having the same cut-off wavelength of 5 μm at 77 K. |
| Databáze: | OpenAIRE |
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