Study of space charge in gallium nitride by the thermal step method
| Autor: | S. Bergaoui, Samir Guermazi, Alain Toureille, Adel Matoussi, Y. Mlik, B. El Jani, T. Boufaden |
|---|---|
| Přispěvatelé: | Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element Gallium nitride 02 engineering and technology Nitride 01 natural sciences Capacitance Condensed Matter::Materials Science chemistry.chemical_compound 0103 physical sciences General Materials Science Gallium Diode 010302 applied physics business.industry Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics Diffusion capacitance Space charge [SPI.TRON]Engineering Sciences [physics]/Electronics chemistry Mechanics of Materials Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | Materials Science and Engineering: B Materials Science and Engineering: B, Elsevier, 2006, 130 (1-3), pp.89-93. ⟨10.1016/j.mseb.2006.02.053⟩ |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/j.mseb.2006.02.053 |
| Popis: | International audience; In this paper, we report the electric investigation of thin nitride gallium films by the capacitance voltage technique and the thermal step method (TSM). The C-V analysis at 1 MHz of Au/GaN diode reveals MOS behaviour and shows strong capacitance hysteresis. This may be due to the presence of trapped charge in this structure. The space charge dynamics is studied by thermal step method at different applied voltages. The TS currents are reverted from negative ones to positive ones above inversion threshold of +0.2 V. This change corresponds to charge modulation from accumulation to the inversion one, in good agreement with the C-V characteristics. The stored charge in this sample is related to the nature of gallium nitride and to the manufacturing processes. The results confirm the possibility to apply the TSM for the measurement of the space charge in the semiconductor materials. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect