Buffer layer-assisted growth of Ge nanoclusters on Si
| Autor: | John F. Wendelken, An-Ping Li |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: |
Nanocluster
Nanostructure Materials science Photoluminescence Nanochemistry BLAG Nanotechnology Semiconductor growth Buffer (optical fiber) Nanoclusters Materials Science(all) Cluster (physics) lcsh:TA401-492 61.46.+w General Materials Science Wetting layer 78.67.Hc Nano Review 78.55.Ap Condensed Matter Physics Ge nanocluster Buffer layer-assisted growth lcsh:Materials of engineering and construction. Mechanics of materials Layer (electronics) 68.37.Lp |
| Zdroj: | Nanoscale Research Letters Nanoscale Research Letters, Vol 1, Iss 1, Pp 11-19 (2006) |
| ISSN: | 1556-276X 1931-7573 |
| Popis: | In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the buffer layer-assisted growth method has provided a unique avenue for creation of nanostructures that are otherwise impossible to grow, and thus offered unprecedented opportunities for fundamental and applied research in nanoscale science and technology. In this article, we review recent progress in the application of the buffer layer-assisted growth method to the fabrication of Ge nanoclusters on Si substrates. In particular, we emphasize the novel configurations of the obtained Ge nanoclusters, which are characterized by the absence of a wetting layer, quasi-zero dimensionality with tunable sizes, and high cluster density in comparison with Ge nanoclusters that are formed with standard Stranski-Krastanov growth methods. The optical emission behaviors are discussed in correlation with the morphological properties. |
| Databáze: | OpenAIRE |
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