Telephone cord buckles—A relation between wavelength and adhesion

Autor: Jean-Yvon Faou, Sergey Grachev, Etienne Barthel, Guillaume Parry
Přispěvatelé: Surface du Verre et Interfaces (SVI), Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Sciences et Ingénierie de la Matière Molle (SIMM), Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Jazyk: angličtina
Rok vydání: 2015
Předmět:
Zdroj: Journal of the Mechanics and Physics of Solids
Journal of the Mechanics and Physics of Solids, 2015, 75, pp.93-103. ⟨10.1016/j.jmps.2014.11.008⟩
Journal of the Mechanics and Physics of Solids, Elsevier, 2015, 75, pp.93-103. ⟨10.1016/j.jmps.2014.11.008⟩
ISSN: 0022-5096
Popis: International audience; Thin films with low adhesion and large residual stresses may buckle. The resulting morphologies are varied, but one of the most commonly observed is an intriguing oscillating pattern – the so-called "telephone cord" – which has been extensively investigated in the recent years. We have studied the kinematics of formation of telephone cords using a geometrically non-linear plate model and mode dependent interfacial toughness, captured via a cohe-sive zone. Through extensive Finite Element Simulations, we have demon-strated a simple, non trivial relation between telephone cord wavelength and interfacial toughness. To validate this prediction, highly stressed Mo thin films where deposited on Si wafers, with a well defined interface and very reproducible adhesion. Studying the morphology of the resulting buckles for different film thicknesses and stresses, we observed a trend which was fully consistent with our simulation results. From the data fit, an adhesion energy of 0.58 ± 0.04 Jm −2 for the SiO 2 /Ag interface was inferred, which compares well with literature estimates.
Databáze: OpenAIRE