Constant common-mode voltage strategies using sigma-delta modulators in five-phase VSI
| Autor: | Fernando Acosta-Cambranis, Jordi Zaragoza, Nestor Berbel, Gabriel J. Capella, Luis Romeral |
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| Přispěvatelé: | Universitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica, Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. MCIA - Motion Control and Industrial Applications Research Group, Universitat Politècnica de Catalunya. (TIEG) - Terrassa Industrial Electronics Group |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
Conversió d'energia
Semiconductors Control and Systems Engineering Sigma-delta modulation Energies::Eficiència energètica [Àrees temàtiques de la UPC] Enginyeria electrònica::Electrònica de potència [Àrees temàtiques de la UPC] Common-mode voltage Electrical and Electronic Engineering Five-phase VSI Power losses Total harmonic distortion Energy conversion Wide-bandgap devices |
| Zdroj: | UPCommons. Portal del coneixement obert de la UPC Universitat Politècnica de Catalunya (UPC) |
| ISSN: | 2016-8047 |
| Popis: | © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This paper proposes and studies different sigma-delta () modulation strategies for obtaining a constant common-mode voltage (CMV) by eliminating the CMV level transitions in a five-phase voltage source inverter (VSI). These techniques are based on choosing vectors that generate a constant CMV with values of 0.1Vdc or 0.1Vdc. Because of the high-switching frequencies used with wide-bandgap semiconductors, pulse-width modulation (PWM) techniques continually generate high dv/dt values. Therefore, the proposal to combine a modulation strategy with vector selections achieves: 1) a constant CMV level due to the elimination of its level transitions; 2) a reduction in conducted electromagnetic interference; and 3) a high-efficiency converter operation. The average number of switching per transistor of the VSI is analyzed using the results from Matlab/Simulink and PLECS simulations. Experimental results are obtained by applying the proposed modulation strategies on a VSI with silicon carbide (SiC) MOSFETs. The results demonstrate the achievement of the aforementioned features. This work was supported in part by the Ministerio de Ciencia, Innovacion y Universidades of Spain within ´ the TRA2016-80472-R and PID2019-111420RB-I00 projects, the CONACYT of Mexico under scholarship 496458, Secre- ´ taria d’Universitats i Recerca del Departament d’Empresa i Coneixement de la Generalitat de Catalunya. |
| Databáze: | OpenAIRE |
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