Anisotropic infrared light emission from quasi-1D layered TiS3
| Autor: | Daniele Pellegrino, Alberto G. Curto, Rasmus H. Godiksen, Saravana Balaji Basuvalingam, Babak Shokri, Ali Khatibi, Ageeth A. Bol |
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| Přispěvatelé: | Photonics and Semiconductor Nanophysics, Eindhoven Hendrik Casimir institute, Nano-Optics of 2D Semiconductors, Plasma & Materials Processing, Processing of low-dimensional nanomaterials, Atomic scale processing |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Photoluminescence excitons Transition metal trichalcogenides Infrared Exciton Nanophotonics 02 engineering and technology 010402 general chemistry 01 natural sciences symbols.namesake Condensed Matter::Materials Science General Materials Science business.industry Linear polarization Mechanical Engineering General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences titanium trisulfide Semiconductor Mechanics of Materials Linear polarization anisotropy symbols Optoelectronics Photonics van der Waals force 0210 nano-technology business infrared luminescence |
| Zdroj: | 2D Materials 2D Materials, 7(1):015022. Institute of Physics |
| ISSN: | 2053-1583 0022-3719 0957-4484 |
| Popis: | Atomically thin semiconductors hold great potential for nanoscale photonic and optoelectronic devices because of their strong light absorption and emission. Despite progress, their application in integrated photonics is hindered particularly by a lack of stable layered semiconductors emitting in the infrared part of the electromagnetic spectrum. Here we show that titanium trisulfide (TiS3), a layered van der Waals material consisting of quasi-1D chains, emits near infrared light centered around 0.91 eV (1360 nm). Its photoluminescence exhibits linear polarization anisotropy and an emission lifetime of 210 ps. At low temperature, we distinguish two spectral contributions with opposite linear polarizations attributed to excitons and defects. Moreover, the dependence on excitation power and temperature suggests that free and bound excitons dominate the excitonic emission at high and low temperatures, respectively. Our results demonstrate the promising properties of TiS3 as a stable semiconductor for optoelectronic and nanophotonic devices operating at telecommunication wavelengths. |
| Databáze: | OpenAIRE |
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