Slip band distribution in rapid thermally annealed silicon wafers
| Autor: | Brian K. Tanner, J. Garagorri, Matteo C. Fossati, M. Reyes Elizalde, D. Jacques |
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| Rok vydání: | 2012 |
| Předmět: |
010302 applied physics
Materials science Silicon Annealing (metallurgy) Lüders band General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Slip (materials science) 021001 nanoscience & nanotechnology 01 natural sciences Crystallography chemistry Heat flux Critical resolved shear stress 0103 physical sciences Wafer Composite material 0210 nano-technology Anisotropy |
| Zdroj: | Journal of Applied Physics |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.4709446 |
| Popis: | X-ray diffraction imaging of 200 mm diameter (100) oriented double-side polished silicon wafers has revealed that the slip band distribution, following rapid thermal annealing (RTA), has a lower symmetry than predicted from the material crystallography. Finite element (FE) modelling of the thermal processes has been undertaken and it is found that, in order to predict the measured temperature distribution during the annealing sequence in a commercial RTA furnace, an anisotropic heat flux distribution in the furnace must be included. When such an anisotropic heat flux is used to predict the wafer temperature, it is found that the temperature gradients are not equivalent in the radial direction. Calculation of the resolved shear stresses on the five independent slip systems associated with these gradients predicts asymmetry between the stress on slip bands that project into the [011] and [01¯1] directions. The anisotropy of the resolved shear stress distribution predicts accurately the asymmetry of the expe... |
| Databáze: | OpenAIRE |
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