Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance
| Autor: | Pang Chao, Rihui Yao, Zhangxu Pan, Junbiao Peng, Honglong Ning, Kuankuan Lu, Hu Shiben, Wang Jiantai, Gong Yanfen, Guo Chan, Zheng Gong |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Annealing (metallurgy) General Chemical Engineering MathematicsofComputing_GENERAL Oxide X-ray reflectivity microwave photoconductivity decay 02 engineering and technology 01 natural sciences Article lcsh:Chemistry chemistry.chemical_compound 0103 physical sciences General Materials Science TFT oxide semiconductor Deposition (law) 010302 applied physics business.industry Photoconductivity 021001 nanoscience & nanotechnology Amorphous solid Threshold voltage a-IGZO lcsh:QD1-999 chemistry Thin-film transistor Optoelectronics 0210 nano-technology business |
| Zdroj: | Nanomaterials Nanomaterials, Vol 11, Iss 522, p 522 (2021) Volume 11 Issue 2 |
| ISSN: | 2079-4991 |
| Popis: | In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (μ-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm2/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec. |
| Databáze: | OpenAIRE |
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