Split-gate organic field-effect transistors for high-speed operation
| Autor: | K. Miyake, T. Matsumoto, Takafumi Uemura, Hamada Masahiro, Mayumi Uno, Chikahiko Mitsui, Shoji Shinamura, Myeong Jin Kang, Masayuki Katayama, S. Ohnishi, Toshihiro Okamoto, Jun Takeya, Kato Tetsuya, Kazuo Takimiya |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Organic electronics
Materials science business.industry Mechanical Engineering Transistor Contact resistance Hardware_PERFORMANCEANDRELIABILITY Fast switching law.invention Parasitic capacitance Mechanics of Materials law Hardware_INTEGRATEDCIRCUITS Optoelectronics General Materials Science Field-effect transistor business |
| Zdroj: | Advanced materials (Deerfield Beach, Fla.). 26(19) |
| ISSN: | 1521-4095 |
| Popis: | Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text