Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser
| Autor: | Philippe Christol, Jean-Louis Lazzari, A. Ben Fredj, Moncef Said, M. Debbichi, Yvan Cuminal |
|---|---|
| Přispěvatelé: | Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR) |
| Rok vydání: | 2008 |
| Předmět: |
Quantum well lasers
Materials science Mid infrared radiation Laser diodes Infrared Performance Gallium antimonides chemistry.chemical_element 02 engineering and technology Substrate (electronics) Charge carrier injection 01 natural sciences law.invention Indium arsenides law 0103 physical sciences Radiative transfer Nitrogen additions Diode 010302 applied physics business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Nitrogen Atomic and Molecular Physics and Optics [SPI.TRON]Engineering Sciences [physics]/Electronics Electronic Optical and Magnetic Materials chemistry Optoelectronics Carrier density Quantum well laser 0210 nano-technology business Optical amplification Current density |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2008, 40 (3), pp.489-493. ⟨10.1016/j.physe.2007.07.003⟩ |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/j.physe.2007.07.003 |
| Popis: | International audience; Dilute-nitride InAsN/GaSb/InAsN "W" laser structure is theoretically investigated and compared with similar nitride-free InAs/GaSb/InAs "W" structure. The two laser diodes, to be grown on (001) InAs substrate, are designed to operate at 3.3μm at room temperature. Their performances are evaluated in terms of modal gain and radiative efficiency characteristics deduced from optical gain calculation. We find that the inclusion of nitrogen in the laser active region improves optical gain performances leading to peak gain values of the order of 1000cm-1 for typical injected carrier concentration of 1.5 x 1018 cm-3. Modal gain value equal to 70 cm-1 can be achieved and radiative current density inferior to 100 A/cm2 is predicted. These results demonstrate that the dilute-nitride InAsN/GaSb/ InAsN laser structure is very attractive for room temperature operation in the midwave infrared domain. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect