AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio
| Autor: | Masaya Ishida, Mototaka Taneya, Yoshihiro Ueta, Shigetoshi Ito, Takayuki Yuasa, Tomoki Ohno, Susumu Omi, Yukio Yamasaki, Toshiyuki Kawakami, Kunihiro Takatani |
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| Rok vydání: | 2004 |
| Předmět: |
Blue laser
Threshold current Materials science Physics and Astronomy (miscellaneous) Laser diode business.industry Slope efficiency General Engineering Physics::Optics General Physics and Astronomy Radiation angle Condensed Matter Physics Laser Waveguide (optics) Electronic Optical and Magnetic Materials law.invention Perpendicular direction Optics law Perpendicular Optoelectronics business Diode |
| Zdroj: | Japanese Journal of Applied Physics. 43:96-99 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.43.96 |
| Popis: | AlGaInN violet laser diodes grown on GaN substrates have been studied. Waveguide simulations have been performed and perpendicular radiation angles have been investigated. A peculiar layer structure has been proposed to reduce the perpendicular radiation angle and compared with a conventional laser. The laser structure has an n-cladding layer consisting of three AlGaN films, the middle film of which has relatively high Al composition. A laser diode with an optimized structure has been fabricated. The threshold current density and slope efficiency have been 2.9 kA/cm2 and 1.4 W/A, respectively. The perpendicular radiation angle has been as small as 16.2°. The AlGaInN violet laser diode with a low aspect ratio of 1.6 and a small threshold current of 29 mA has been realized. |
| Databáze: | OpenAIRE |
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