Stacking Fault Enriching the Electronic and Transport Properties of Few-Layer Phosphorenes and Black Phosphorus
| Autor: | Yi-Yang Sun, Shuang-Ying Lei, Lan Huang, Han Wang, Shengbai Zhang |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Fabrication
Band gap Chemistry Mechanical Engineering Stacking Bioengineering 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences symbols.namesake Crystallography Phosphorene chemistry.chemical_compound Chemical physics Electron affinity 0103 physical sciences symbols General Materials Science Ionization energy van der Waals force 010306 general physics 0210 nano-technology Stacking fault |
| Zdroj: | Nano Letters. 16:1317-1322 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.5b04719 |
| Popis: | Interface engineering is critical for enriching the electronic and transport properties of two-dimensional materials. Here, we identify a new stacking, named Aδ, in few-layer phosphorenes (FLPs) and black phosphorus (BP) based on first-principles calculation. With its low formation energy, the Aδ stacking could exist in FLPs and BP as a stacking fault. The presence of the Aδ stacking fault induces a direct to indirect transition of the band gap in FLPs. It also affects the carrier mobilities by significantly increasing the carrier effective masses. More importantly, the Aδ stacking enables the fabrication of a whole spectrum of lateral junctions with all the type-I, II, and III alignments simply through the manipulation of the van der Waals stacking without resorting to any chemical modification. This is achieved by the widely tunable electron affinity and ionization potential of FLPs and BP with the Aδ stacking. |
| Databáze: | OpenAIRE |
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