A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation
| Autor: | M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Gwarek, S. Boubanga, D. Coquillat, W. Knap, A. Shchepetov, S. Bollaert, Marília Caldas, Nelson Studart |
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| Přispěvatelé: | Institute of Experimental Physics [Warsaw] (IFD), Faculty of Physics [Warsaw] (FUW), University of Warsaw (UW)-University of Warsaw (UW), Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2010 |
| Předmět: |
Field effect transistor
Electron mobility Materials science Terahertz radiation Induced high electron mobility transistor Physics::Optics 02 engineering and technology 01 natural sciences law.invention law 0103 physical sciences TERAHERTZ RADIATION 010302 applied physics Coupling Condensed Matter::Other business.industry Bipolar junction transistor Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph] Detection Antenna Optoelectronics THz Field-effect transistor Antenna (radio) 0210 nano-technology business |
| Zdroj: | PHYSICS OF SEMICONDUCTORS 29th International Conference on Physics of Semiconductors Rio de Janeiro, BRAZIL 29th International Conference on Physics of Semiconductors Rio de Janeiro, BRAZIL, Jul 2008, Rio de Janeiro, Brazil. pp.503 American Institute of Physics Conference Proceedings, 1199 29th International Conference on Physics of Semiconductors, ICPS-29 29th International Conference on Physics of Semiconductors, ICPS-29, 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩ 29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩ |
| ISSN: | 0094-243X |
| Popis: | International audience; The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency is related to the layout of contact electrodes that play a role of an antenna. Our results show that the antenna coupling efficiency is one of the most important parameter to optimize in future field effect transistor based terahertz detectors. |
| Databáze: | OpenAIRE |
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