Monolithic integration of GaN-based phototransistors and light-emitting diodes
| Autor: | Tsung-Che Wu, Yan-Xiang Chen, Tzu-Hsun Wang, Tzu-Chieh Chou, Yu-Chieh Chiu, Pinghui S. Yeh |
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| Rok vydání: | 2019 |
| Předmět: |
Photocurrent
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology medicine.disease_cause 01 natural sciences Atomic and Molecular Physics and Optics law.invention Photodiode 010309 optics Optics law 0103 physical sciences medicine Wafer Quantum efficiency 0210 nano-technology business Ultraviolet Common emitter Light-emitting diode Diode |
| Zdroj: | Optics express. 27(21) |
| ISSN: | 1094-4087 |
| Popis: | Monolithic integration of GaN-based phototransistors and light-emitting diodes (LEDs) is reported. Starting with an LED epitaxial wafer, selective Si diffusion was performed to produce an n–p–i–n structure for the phototransistor. A traditional AlGaN bulk electron-blocking layer (EBL) can block electron injection from an emitter to a collector, thereby hindering the photocurrent amplification process. We used an LED wafer with a superlattice EBL; blocking can be removed under a bias of approximately 7 V and above. External quantum efficiencies of more than 100% and 600% at approximately 380 nm and 330 nm, respectively, were achieved at room temperature and a bias of 11 V, corresponding to responsivities of 0.31 and 1.6 A/W, respectively, significantly higher than commercially available ultraviolet (UV) detectors. Furthermore, we demonstrated an integrated operation of the device. UV light was detected using a phototransistor that sent signals to drive an integrated LED as an indicator. |
| Databáze: | OpenAIRE |
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