Liquid Crystal Structure of Supercooled Liquid Gallium and Eutectic Gallium-Indium

Autor: Hamed Shahsavan, Amirreza Aghakhani, Metin Sitti, Yunus Alapan, Antal Jakli, Muhammad Yunusa, Alex Adaka, Yubing Guo
Přispěvatelé: Sitti, Metin (ORCID 0000-0001-8249-3854 & YÖK ID 297104), Yunusa, Muhammad, Adaka, Alex, Aghakhani, Amirreza, Shahsavan, Hamed, Guo, Yubing, Alapan, Yunus, Jakli, Antal, College of Engineering, School of Medicine, Department of Mechanical Engineering
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Advanced Materials
Advanced Materials, 33 (38)
ISSN: 0935-9648
1521-4095
DOI: 10.3929/ethz-b-000500186
Popis: Understanding the origin of structural ordering in supercooled liquid gallium (Ga) has been a great scientific quest in the past decades. Here, reflective polarized optical microscopy on Ga sandwiched between glasses treated with rubbed polymers reveals the onset of an anisotropic reflection at 120 degrees C that increases on cooling and persists down to room temperature or below. The polymer rubbing usually aligns the director of thermotropic liquid crystals (LCs) parallel to the rubbing direction. On the other hand, when Ga is sandwiched between substrates that align conventional LC molecules normal to the surface, the reflection is isotropic, but mechanical shear force induces anisotropic reflection that relaxes in seconds. Such alignment effects and shear-induced realignment are typical to conventional thermotropic LCs and indicate a LC structure of liquid Ga. Specifically, Ga textures obtained by atomic force and scanning electron microscopy reveal the existence of a lamellar structure corresponding to a smectic LC phase, while the nanometer-thin lamellar structure is transparent under transmission polarized optical microscopy. Such spatial molecular arrangements may be attributed to dimer molecular entities in the supercooled liquid Ga. The LC structure observation of electrically conductive liquid Ga can provide new opportunities in materials science and LC applications.
Advanced Materials, 33 (38)
ISSN:0935-9648
ISSN:1521-4095
Databáze: OpenAIRE