Epitaxial GeSn and its integration in MIR Optoelectronics
| Autor: | Aashish Kumar, Samik Mukherjee, Oussama Moutanabbir, Alain Dijkstra, Salim Abdi, Mahmoud R. M. Atalla, Anis Attiaoui, Simone Assali |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Atmospheric temperature range 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences 010309 optics Semiconductor chemistry Optical materials 0103 physical sciences Optoelectronics 0210 nano-technology business Photonic crystal |
| Zdroj: | Publons Scopus-Elsevier |
| Popis: | The effect of strain and composition on the opto-electronic properties of (Si)GeSn semiconductors across the 4-300K temperature range will be discussed to pave the way for future device operation up to 4.5 pm wavelengths. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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